Schottky diode

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SGS Thomson

Schottky diode,

100V, 0.15A, DO-35.

(w/include VAT): 0
On Stock

The Schottky diode is a semiconductor diode with a low forward voltage drop and a very fast switching action.
A metal–semiconductor junction is formed between a metal and a semiconductor, creating a Schottky barrier (instead of a semiconductor–semiconductor junction as in conventional diodes). Typical metals used are molybdenum, platinum, chromium or tungsten, and certain silicides, e.g. palladium silicide and platinum silicide; and the semiconductor would typically be N-type silicon. The metal side acts as the anode and N-type semiconductor acts as the cathode of the diode. This Schottky barrier results in both very fast switching and low forward voltage drop. A normal silicon diode has a voltage drop between 0.6–1.7V, while a Schottky diode voltage drop is between approximately 0.15–0.45V.

Max. Reverse Voltage 100 V
Max. Forward Current (If) 0,15 A
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