IGBT Module

2MBI200VH-120-50
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FUJI
MFR Part No: 2MBI200VB-120-50

Module IGBTx2 1200V 200A.

93.22
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Power module IGBTx2 1200V 200A.

IGBT (Insulated Gate Bipolar Transistor) a power transistor that has characteristics of both MOSFET and bipolar junction transistors (BJTs). Introduced in the 1980s, the IGBT handles high current, a characteristic of BJTs, but enables fast switching with greater ease of control. IGBTs are found in home appliances, electric cars and digital stereo power amplifiers. Modules with multiple IGBTs can support very high voltage and amperage.

Structure
Dual (x2)
Vce max 1.200 V
Ic max 200 A
Reverse Recovery Time 150 ns
Additonal Equipment
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