IGBT Module

6MBI15L-120
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FUJI
MFR Part No: 6MBI15L-120

Module IGBTx6 1200V 15A.

41.59
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Power module IGBTx6 1200V 15A.

IGBT (Insulated Gate Bipolar Transistor) a power transistor that has characteristics of both MOSFET and bipolar junction transistors (BJTs). Introduced in the 1980s, the IGBT handles high current, a characteristic of BJTs, but enables fast switching with greater ease of control. IGBTs are found in home appliances, electric cars and digital stereo power amplifiers. Modules with multiple IGBTs can support very high voltage and amperage.

Structure
Hex (x6)
Vce max 1.200 V
Ic max 15 A
Reverse Recovery Time 350 ns
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