IGBT Module

BSM75GD120DN2
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SIEMENS

Module IGBTx6 1200V 75A.

146.01
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Power Module IGBTx6 1200V 75A.
IGBT (Insulated Gate Bipolar Transistor) a power transistor that has characteristics of both MOSFET and bipolar junction transistors (BJTs). Introduced in the 1980s, the IGBT handles high current, a characteristic of BJTs, but enables fast switching with greater ease of control. IGBTs are found in home appliances, electric cars and digital stereo power amplifiers. Modules with multiple IGBTs can support very high voltage and amperage.

Structure
Hex (x6)
Vce max 1.200 V
Ic max 75 A
Reverse Recovery Time 125 ns
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