IGBT Module

2MBI300S-120
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FUJI

Module IGBTx2 1200V 300A.

135.59
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Power module IGBTx2 1200V 300A.

IGBT (Insulated Gate Bipolar Transistor) a power transistor that has characteristics of both MOSFET and bipolar junction transistors (BJTs). Introduced in the 1980s, the IGBT handles high current, a characteristic of BJTs, but enables fast switching with greater ease of control. IGBTs are found in home appliances, electric cars and digital stereo power amplifiers. Modules with multiple IGBTs can support very high voltage and amperage.

Structure
Dual (x2)
Vce max 1.200 V
Ic max 300 A
Reverse Recovery Time 350 ns
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